r07ds1179ej0700 rev.7.00 page 1 of 6 mar 19, 2014 data sheet HAT2202C silicon n channel mos fet power switching features ? low on-resistance r ds(on) = 31 m typ. (at v gs = 4.5 v) ? low drive current. ? high density mounting ? 2.5 v gate drive devices. outline renesas package code: pwsf0006ja-a (package name: cmfpak-6) 1. source 2. drain 3. drain 4. drain 5. drain 6. gate 1 2 3 6 5 4 indexband g d s 6 1 5 d 2 d 3 d 4 absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss 20 v gate to source voltage v gss 12 v drain current i d 3 a drain peak current i d(pulse) note1 12 a body - drain diode reverse drain current i dr 3 a channel dissipation pch note 2 900 mw channel temperature tch 150 c storage temperature tstg ?55 to +150 c notes: 1. pw 10 s, duty cycle 1% 2. when using the glass epoxy board. (fr4 40 40 1.6 mm) r07ds1179ej0700 (previous: rej03g1236-0600) rev.7.00 mar 19, 2014
HAT2202C r07ds1179ej0700 rev.7.00 page 2 of 6 mar 19, 2014 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 20 ? ? v i d = 10 ma, v gs = 0 gate to source breakdown voltage v (br)gss 12 ? ? v i g = 100 a, v ds = 0 gate to source leakage current i gss ? ? 10 a v gs = 10v, v ds = 0 drain to source leakage current i dss ? ? 1 a v ds = 20 v, v gs = 0 gate to source cutoff voltage v gs(th) 0.4 ? 1.4 v i d = 10 v, i d = 1 ma drain to source on state resistance r ds(on) ? 31 40 m i d = 1.5 a, v gs =4.5 v note3 r ds(on) ? 43 55 m i d = 1.5 a, v gs = 2.5 v note3 forward transfer admittance |y fs | 6.5 9.5 ? s i d = 1.5 a, v ds = 10 v note3 input capacitance ciss ? 520 ? pf v ds = 10 v, v gs = 0, f = 1 mhz output capacitance coss ? 115 ? pf reverse transfer capacitance crss ? 60 ? pf total gate charge qg ? 6 ? nc v dd = 10 v, v gs = 4.5 v, i d = 3 a gate to source charge qgs ? 1 ? nc gate to drain charge qgd ? 1.4 ? nc turn - on delay time t d(on) ? 9 ? ns i d = 1.5 a, v gs = 10 v, v dd =10 v, r l = 6.7 , r g = 4.7 rise time t r ? 8 ? ns turn - off delay time t d(off) ? 28 ? ns fall time t f ? 6 ? ns body - drain diode forward voltage v df ? 0.8 1.1 v i f = 3 a, v gs = 0 note3 notes: 3. pulse test
HAT2202C r07ds1179ej0700 rev.7.00 page 3 of 6 mar 19, 2014 main characteristics channel dissipation pch (w) ambient temperature ta (c) power vs. temperature derating drain to source voltage v ds (v) drain current i d (a) maximum safe operation area drain to source voltage v ds (v) drain current i d (a) typical output characteristics gate to source voltage v gs (v) drain current i d (a) typical transfer characteristics gate to source voltage v gs (v) drain to source voltage v ds(on) (mv) drain to source saturation voltage vs. gate to source voltage drain current i d (a) drain to source on state resistance r ds(on) (m) static drain to source on state resistance vs. drain current 1.6 1.2 0.8 0.4 0 50 100 150 200 30 10 3 1 0.3 0.1 0.1 0.3 0.03 1 3 10 30 100 20 16 12 8 4 0 24 6810 20 16 12 8 4 0 12 34 5 0.03 0.01 100 1.4 v 1.6 v pulse test 2.0 v 120 80 40 0 24 6 8 10 0.1 10 1 100 100 1000 10 160 3 a 1.5 a 1.8 v 2.5 v 4.5 v v gs = 1.2 v 2.5 v pw = 100 s dc operation pw = 10 ms pw = 1 ms 25c 75c i d = 1 a v gs = 4.5 v test condition : when using the glass epoxy board (fr4 40 x 40 x 1.6 mm) tc = ?25c v ds = 10 v pulse test pulse test pulse test ta = 25c,1shot pulse when using the fr4 board. operation in this area is limited by r ds(on) pw =10 s
HAT2202C r07ds1179ej0700 rev.7.00 page 4 of 6 mar 19, 2014 case temperature tc (c) static drain to source on state resistance r ds(on) (m ) static drain to source on state resistance vs. temperature forward transfer admittance |y fs | (s) drain current i d (a) forward transfer admittance vs. drain current capacitance c (pf) drain to source voltage v ds (v) typical capacitance vs. drain to source voltage gate charge qg (nc) drain to source voltage v ds (v) gate to source voltage v gs (v) dynamic input characteristics drain current i d (a) switching time t (ns) switching characteristics source to drain voltage v sd (v) reverse drain current i dr (a) reverse drain current vs. source to drain voltage 75 60 45 30 15 ?25 0 25 50 75 100 125 150 0 0.3 0.1 1 10 100 30 10 3 1 0.3 0.1 3 25c 75c v gs = 2.5 v 1, 1.5 ,3 a 0 10 20 1000 100 300 40 0 8 30 6 20 4 10 2 24 6810 0 100 1 10 0.1 0.3 1 3 10 30 10 0 30 10 ciss coss i d = 3 a v dd v gs 51 52 5 0 0.4 0.8 1.2 1.6 2.0 20 8 v gs = 0 v 4 12 16 3 a i d = 1, 1.5 a 4.5 v 5 v crss v gs = 4.5 v, v dd = 10 v rg = 4.7 , duty 1 % tc = ?25 c pulse test v ds = 10 v pulse test v gs = 0 f = 1 mhz v dd = 5 v 10 v 20 v v dd = 20 v 10 v 5 v t r t f t d(off) t d(on) pulse test
HAT2202C r07ds1179ej0700 rev.7.00 page 5 of 6 mar 19, 2014 vin monitor d.u.t. vin 10 v r l v dd = 10 v vout monitor 4.7 switching time test circuit waveform t r t f t d(on) vin 90% 90% 10% 10% vout t d(off) 90% 10%
HAT2202C r07ds1179ej0700 rev.7.00 page 6 of 6 mar 19, 2014 package dimensions d a aa a a a 2 a 1 l l p s s s y b b 1 l 1 m x eh e e e e 1 c pattern of terminal position areas a a 1 a 2 b c d e e h e l l p x y b 1 e 1 l 1 0.7 0 0.7 0.15 0.1 1.9 1.6 2.05 0.1 0.15 0.2 0.15 2.0 1.7 0.65 2.1 0.2 1.9 0.8 0.01 0.79 0.3 0.25 2.1 1.8 2.15 0.3 0.45 0.05 0.05 0.3 0.4 dimension in millimeters reference symbol min nom max ? 0.0065g mass[typ.] cmfpak-6 / cmfpak-6v pwsf0006ja-a renesas code jeita package code previous code b a-a section c package name cmfpak-6 ordering information orderable part number quan tity shipping container HAT2202C-el-e 3000 pcs taping
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